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Si4134DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
T J = 150 °C
0.06
0.05
I D = 10 A
1
T J = 25 °C
0.04
0.03
0.1
0.01
0.001
0.02
0.01
0.00
T J = 125 °C
T J = 25 °C
0.0
0.2
0.4
0.6
0. 8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
0.4
0.2
V SD - So u rce-to-Drain V oltage ( V )
Source-Drain Diode Forward Voltage
8 0
64
V GS - Gate-to-So u rce V oltage ( V )
On-Resistance vs. Gate-to-Source Voltage
0
4 8
- 0.2
I D = 5 mA
32
- 0.4
- 0.6
- 0. 8
I D = 250 μ A
16
0
- 50
- 25
0
25
50
75
100
125
150
0 . 0 0 1
0.01
0.1
1
1 0
T J - Temperat u re (°C)
Threshold Voltage
100
Limited by R DS(on) *
Time (s)
Single Pulse Power, Junction-to-Ambient
10
1 ms
1
10 ms
100 ms
1s
0.1
T A = 25 °C
Single P u lse
10 s
DC
BVDSS Limited
0.01
0.1
1
10
100
V DS - Drain-to-So u rce V oltage ( V )
* V GS > minim u m V GS at w hich R DS(on) is specified
Safe Operating Area, Junction-to-Ambient
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4
Document Number: 68999
S11-0650-Rev. C, 11-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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